? semiconductor components industries, llc, 2012 january, 2012 ? rev. 4 1 publication order number: mbrb8h100/d mbrb8h100t4g, NBRB8H100T4G switchmode schottky power rectifier surface mount power package this series of power rectifiers employs the schottky barrier principle in a large metal ? to ? silicon power diode. state ? of ? the ? art geometry features epitaxial construction with oxide passivation and metal overlay contact. ideally suited for use in low voltage, high frequency switching power supplies, free wheeling diodes, and polarity protection diodes. features ? guardring for stress protection ? low forward voltage ? 175 ? c operating junction temperature ? epoxy meets ul 94 v ? 0 @ 0.125 in ? short heat sink tab manufactured ? not sheared! ? aec ? q101 qualified and ppap capable ? nbrb prefix for automotive and other applications requiring unique site and control change requirements ? all packages are pb ? free* mechanical characteristics: ? case: epoxy, molded, epoxy meets ul 94 v ? 0 ? weight: 1.7 grams (approximately) ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead and mounting surface temperature for soldering purposes: 260 ? c max. for 10 seconds ? device meets msl1 requirements ? esd ratings: ? machine model = c (> 400 v) ? human body model = 3b (> 8000 v) *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. schottky barrier rectifier 8 amperes, 100 volts 1 3 4 http://onsemi.com d 2 pak case 418b marking diagram (pin 1 = no connect) ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. device package shipping ? ordering information mbrb8h100t4g d 2 pak (pb ? free) 800 / tape & reel NBRB8H100T4G d 2 pak (pb ? free) 800 / tape & reel ayww b8h100g aka b8h100 = specific device code a = assembly location y = year ww = work week g = pb ? free package aka = polarity indicator
mbrb8h100t4g, NBRB8H100T4G http://onsemi.com 2 maximum ratings rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 100 v average rectified forward current (rated v r ) t c = 171 ? c i f(av) 8 a peak repetitive forward current (rated v r , square wave, 20 khz) t c = 171 ? c i frm 16 a max nonrepetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz, 25 ? c) i fsm 250 a operating junction and storage temperature range (note 1) t j , t stg ? 65 to +175 ? c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability. 1. the heat generated must be less than the thermal conductivity from junction ? to ? ambient: dp d /dt j < 1/r ja . thermal characteristics characteristic symbol value unit thermal resistance junction ? to ? case (note 2) junction ? to ? ambient r jc r ja 1.1 44 ? c/w 2. when mounted using minimum recommended pad size on fr ? 4 board. electrical characteristics characteristic symbol value unit maximum instantaneous forward voltage (note 3) (i f = 8 a, t j = 25 ? c) (i f = 8 a, t j = 125 ? c) v f 0.71 0.55 v maximum instantaneous reverse current (note 3) (rated dc voltage, t j = 25 ? c) (rated dc voltage, t j = 125 ? c) i r 4.5 5.3 a ma dynamic characteristics (per leg) capacitance (v r = 4.0 v, t c = 25 ? c, frequency = 1.0 mhz) c t 600 pf 3. pulse test: pulse width = 300 s, duty cycle ? 2.0%
mbrb8h100t4g, NBRB8H100T4G http://onsemi.com 3 typical characteristics figure 1. typical forward voltage figure 2. maximum forward voltage v f , instantaneous forward voltage (v) v f , instantaneous forward voltage (v) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 1 10 100 1.3 1.1 0.9 0.7 0.5 0.3 0.1 1 10 100 figure 3. typical reverse current figure 4. maximum reverse current v r , reverse voltage (v) v r , reverse voltage (v) 90 80 60 50 30 20 10 0 0.0001 0.001 0.01 0.1 1 10 90 80 60 50 30 20 10 0 0.0001 0.01 0.1 1 10 i f , instantaneous forward current (a) i f , instantaneous forward current (a) i r , reverse current (ma) i r , reverse current (ma) 1.1 1.0 150 ? c 125 ? c 25 ? c 150 ? c 125 ? c 25 ? c 40 70 100 150 ? c 125 ? c 25 ? c 40 70 100 150 ? c 125 ? c 25 ? c figure 5. typical capacitance figure 6. current derating, case v r , reverse voltage (v) t c , case temperature ( ? c) 80 70 60 50 30 20 10 0 0 200 400 600 800 1400 1800 2000 175 170 160 160 155 150 0 2 6 10 14 c, capacitance (pf) i f(av) , average forward current (a) 40 90 100 1000 1600 t j = 25 ? c f = 1 mhz dc 0.1 1.2 1.0 0.8 0.6 0.4 0.2 100 0.001 100 1200 4 8 12 square wave r jc = 1.1 ? c/w
mbrb8h100t4g, NBRB8H100T4G http://onsemi.com 4 typical characteristics figure 7. current derating, ambient figure 8. typical forward power dissipation t a , ambient temperature ( ? c) 120 100 80 40 20 0 0 1 2 3 4 8 i f(av) , average forward current (a) r ja = 44 ? c/w dc square wave i f(av) , average forward current (a) 8 4 3 2 1 0 0 2 1 5 p f(av) , average power dissipation (w) t j = 175 ? c dc square wave figure 9. maximum forward power dissipation i f(av) , average forward current (a) 8 7 3 2 1 0 0 1 2 3 4 p f(max) , maximum power dissipation (w) t j = 175 ? c dc square wave 60 5 6 7 7 6 5 3 4 6 5 4 dc r ja = 80 ? c/w 5 figure 10. thermal response, junction ? to ? ambient 0.1 0.00001 pulse time (s) 100 10 0.1 0.01 0.001 0.0001 0.001 0.01 1.0 10 100 0.000001 50% (duty cycle) 20% 10% 5.0% 2.0% 1.0% single pulse 1000 1.0 r (t) , transient thermal response ( ? c/w) 180 160 140
mbrb8h100t4g, NBRB8H100T4G http://onsemi.com 5 package dimensions d 2 pak 3 case 418b ? 04 issue k seating plane s g d ? t ? m 0.13 (0.005) t 23 1 4 3 pl k j h v e c a dim min max min max millimeters inches a 0.340 0.380 8.64 9.65 b 0.380 0.405 9.65 10.29 c 0.160 0.190 4.06 4.83 d 0.020 0.035 0.51 0.89 e 0.045 0.055 1.14 1.40 g 0.100 bsc 2.54 bsc h 0.080 0.110 2.03 2.79 j 0.018 0.025 0.46 0.64 k 0.090 0.110 2.29 2.79 s 0.575 0.625 14.60 15.88 v 0.045 0.055 1.14 1.40 ? b ? m b w w notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 418b ? 01 thru 418b ? 03 obsolete, new standard 418b ? 04. f 0.310 0.350 7.87 8.89 l 0.052 0.072 1.32 1.83 m 0.280 0.320 7.11 8.13 n 0.197 ref 5.00 ref p 0.079 ref 2.00 ref r 0.039 ref 0.99 ref m l f m l f m l f variable configuration zone r n p u view w ? w view w ? w view w ? w 123 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 8.38 5.080 dimensions: millimeters pitch 2x 16.155 1.016 2x 10.49 3.504
mbrb8h100t4g, NBRB8H100T4G http://onsemi.com 6 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 mbrb8h100/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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